早在1973年，SEMI就開始與會(huì)員公司一起制定晶圓尺寸等半導(dǎo)體行業(yè)標(biāo)準(zhǔn)，目前已有800多條國際標(biāo)準(zhǔn)在半導(dǎo)體制造、平板顯示等多項(xiàng)領(lǐng)域得到普遍運(yùn)用。
從2007年開始，隨著光伏行業(yè)的蓬勃發(fā)展，SEMI開展推動(dòng)在光伏領(lǐng)域的標(biāo)準(zhǔn)制定工作。目前已經(jīng)成立了北美、歐洲、日本、臺(tái)灣地區(qū)在內(nèi)的技術(shù)委員會(huì)，接近20個(gè)任務(wù)小組或工作小組，覆蓋了包括硅材料、硅片、晶體電池、晶體組件、薄膜、原材料、測試方法、設(shè)備接口等在內(nèi)的多個(gè)領(lǐng)域。
截止2010年10月18日，SEMI已共計(jì)發(fā)布了23條光伏行業(yè)相關(guān)標(biāo)準(zhǔn)，在全球業(yè)界得到廣泛應(yīng)用和推崇。這些SEMI光伏行業(yè)標(biāo)準(zhǔn)包括：
. E10-0304E——設(shè)備可靠性、可用性和可維護(hù)性定義說明：Specification for Definition and Measurement of Equipment Reliability, Availability, and Maintainability (RAM)
. F47-0706——半導(dǎo)體工藝設(shè)備電壓暫降預(yù)防說明：Specification for Semiconductor Processing Equipment Voltage Sag Immunity
. F108-0310——用于半導(dǎo)體、平板顯示、太陽能電池制造的液體化學(xué)試劑管道傳送部件指南：Guide for Integration of Liquid Chemical Piping Components for Semiconductor, Flat Panel Display, and Solar Cell Manufacturing Applications
. M6-1108——用于制造光伏電池的硅晶圓規(guī)格說明：Specification for Silicon Wafers for Use as Photovoltaic Solar Cells
. M44-0305——硅中間隙氧轉(zhuǎn)化因素指南：Guide to Conversion Factors for Interstitial Oxygen in Silicon
. ME391-0310——利用穩(wěn)態(tài)表面光電壓測試方法測量非本征半導(dǎo)體中少數(shù)載流子擴(kuò)散長度的方法：Test Method for Minority Carrier Diffusion Length in Extrinsic Semiconductors by Measurement of Steady-State Surface Photovotake
. MF1188-1107——利用短基線紅外吸收法測量硅中間隙氧含量的方法：Test Method for Interstitial Oxygen Content of Silicon by Infrared Absorption With Short Baseline
. MF1619-1107——利用在布魯斯特角進(jìn)行p型極化入射獲得紅外吸收光譜測量硅晶圓中間隙氧含量的測試方法：Test Method for Measurement of Interstitial Oxygen Content
of Silicon Wafers by Infrared Absorption Spectroscopy with p-Polarized Radiation Incident at the Brewster Angle
. MF1727-0304——檢測拋光硅晶圓中因氧化導(dǎo)致缺陷的操作方法：Practice for Detection of Oxidation Induced Defects in Polished Silicon Wafers
. MF 1809-0704——表征硅中結(jié)構(gòu)性缺陷的刻蝕方案的選擇與使用指南：Guide for Selection and Use of Etching Solutions to Delineate Structural Defects in Silicon
. MF 1810-0304——硅中優(yōu)先刻蝕或綴飾的表面缺陷的計(jì)量測試方法：Test Method for Counting Preferentially Etched or Decorated Surface Defects in Silicon Wafers
. PV1-0709——利用高質(zhì)量分辨率輝光放電質(zhì)譜測量光伏級(jí)硅中微量元素的方法：Test Method for Measuring Trace Elements in Photovoltaic-Grade Silicon by High-Mass Resolution Glow Discharge Mass Spectrometry
. PV2-0709E——光伏設(shè)備通信接口指南（PV ECI）：Guide for PV Equipment Communication Interfaces －Unified communication standard between PV production equipment and the shop floor
. PV3-0310——用于光伏電池處理工藝的高純水指南：Guide for High Purity Water Used In Photovoltaic Cell Processing
. PV4-0710——用于光伏應(yīng)用薄膜第五代襯底尺寸范圍的規(guī)范：Specification for range of 5th generation substrate sizes for thin-film Photovoltaic application
. PV5-1110——用于光伏行業(yè)的氧氣（大宗氣體）指南：Guide for Oxygen (O2), Bulk, Used In Photovoltaic Applications
. PV6-1110——用于光伏行業(yè)的氬氣（大宗氣體）指南：Guide for Argon (Ar), Bulk, Used In Photovoltaic Applications
. PV7-1110——用于光伏行業(yè)的氫氣（大宗氣體）指南：Guide for Hydrogen (H2), Bulk, Used In Photovoltaic Applications
. PV8-1110——用于光伏行業(yè)的氮?dú)猓ù笞跉怏w）指南：Guide for Nitrogen (N2), Bulk, Used In Photovoltaic Applications
. PV11-1110——用于光伏行業(yè)的氫氟酸規(guī)格說明：Specifications for Hydrofluoric Acid, Used In Photovoltaic Applications
. PV12-1110——用于光伏行業(yè)的磷酸規(guī)格說明：Specifications for Phosphoric Acid, Used In Photovoltaic Applications
. PV9-1110——利用非接觸式的微波反射光電導(dǎo)衰減法測量光伏用硅材料的多余載流子壽命的測量方法：Test Method for Excess Charge Carrier Lifetime in PV Silicon Materials by Non-Contact Measurements of Photoconductivity Decay By Microwave Reflectance
. PV10-1110——用儀器中子活化分析測量硅材料的方法：Test Method for Instrumental Neutron Activation Analysis (INAA) Of Silicon
查詢進(jìn)一步信息，請?jiān)L問http://www.corporate.semi.org.cn/。
